IRFBC30 Datasheet - INCHANGE

IRFBC30, TO-220 N-Channel MOSFET

iscN-Channel MOSFET Transistor IRFBC30 *

Features

* Low drain-source on-resistance: RDS(ON) =2.2Ω (MAX)
* Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Switching Voltage Regulators
* ABSOLUTE M

Applications

* of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

IRFBC30_INCHANGE.pdf