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IRFBC30S Power MOSFET

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Description

PD - 9.1015 PRELIMINARY l l l l l l l IRFBC30S/L HEXFET® Power MOSFET D Surface Mount (IRFBC30S) Low-profile through-hole (IRFBC30L) Available in T.
Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low.

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Applications

* because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFBC30L) is available for low-profile applications. D 2 Pak T O -2 6 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 2

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