IRFBC40L
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Power mosfet. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design
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IRFBC40 - N-Channel Power MOSFET
(STMicroelectronics)
®
IRFBC40
N - CHANNEL 600V - 1.0 Ω - 6.2 A - TO-220 PowerMESH™ MOSFET
TYPE IRFBC40
s s s s s
V DSS 600 V
R DS(on) < 1.2 Ω
ID 6.2 A
TYPICAL RDS(o.
IRFBC40 - N-Channel Power MOSFET
(Intersil Corporation)
IRFBC40
Data Sheet July 1999 File Number
2157.3
6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field.
IRFBC40 - Power MOSFET
(International Rectifier)
.
IRFBC40 - N-Channel Power MOSFET
(Fairchild Semiconductor)
IRFBC40
Data Sheet January 2002
6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transist.
IRFBC40 - Power MOSFET
(Vishay)
.vishay.
IRFBC40
Vishay Siliconix
Power MOSFET
D TO-220AB
S D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs.
IRFBC40 - N-Channel Power MOSFETs
(Harris)
Semiconductor
IRFBC40, IRFBC42
6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon.
IRFBC40 - N-Channel MOSFET
(INCHANGE)
iscN-Channel MOSFET Transistor
IRFBC40
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 1.2Ω (MAX) ·Enhancement mode:
Vth = 2 to 4V (VDS = 10 V,.
IRFBC40A - Power MOSFET
(International Rectifier)
PD -91885A
SMPS MOSFET
IRFBC40A
HEXFET® Power MOSFET
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed p.
IRFBC40A - Power MOSFET
(Vishay)
.vishay.
IRFBC40A
Vishay Siliconix
Power MOSFET
D TO-220AB
S D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qg.
IRFBC40A - N-Channel MOSFET
(INCHANGE)
iscN-Channel MOSFET Transistor
IRFBC40A
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 1.2Ω (MAX) ·Enhancement mode:
Vth = 2 to 4V (VDS = 10 V.
