IRFBC30
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Power mosfet. Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design
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IRFBC30 - TO-220C N-Channel MOSFET Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFBC30
FEATURES ·Lower Input Capacitance ·Improved Gate Charge ·Ex.
IRFBC30 - N-Channel Power MOSFET
(STMicroelectronics)
®
IRFBC30
N - CHANNEL 600V - 1.8 Ω - 3.6A - TO-220 PowerMESH ™ ΙΙ MOSFET
TYPE IRFBC30
s s s s s
V DSS 600 V
R DS(on) < 2.2 Ω
ID 3.6 A
TYPICAL RD.
IRFBC30 - Power MOSFET
(International Rectifier)
.
IRFBC30 - TO-220 N-Channel MOSFET
(INCHANGE)
iscN-Channel MOSFET Transistor
IRFBC30
·FEATURES ·Low drain-source on-resistance:
RDS(ON) =2.2Ω (MAX) ·Enhancement mode:
Vth = 2 to 4V (VDS = 10 V, .
IRFBC30A - Power MOSFET
(International Rectifier)
PD- 91889A
SMPS MOSFET
IRFBC30A
HEXFET® Power MOSFET
Applications Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power.
IRFBC30A - N-Channel MOSFET
(INCHANGE)
iscN-Channel MOSFET Transistor
IRFBC30A
·FEATURES ·Low drain-source on-resistance:
RDS(ON) =2.2Ω (MAX) ·Enhancement mode:
Vth = 2 to 4.5V (VDS = 10 .
IRFBC30A - Power MOSFET
(Vishay)
IRFBC30A, SiHFBC30A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
600
VGS = 10 .
IRFBC30AL - Power MOSFET
(Vishay)
IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Conf.
IRFBC30APBF - Power MOSFET
(International Rectifier)
SMPS MOSFET
PD - 95700
IRFBC30APbF
HEXFET® Power MOSFET
..
Applications Switch Mode Power Supply (SMPS) l Uninterruptable Power S.
IRFBC30AS - Power MOSFET
(International Rectifier)
PD- 91890B
SMPS MOSFET
IRFBC30AS/L
HEXFET® Power MOSFET
Applications Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed po.