IRFBC20S Datasheet, Mosfet, International Rectifier

IRFBC20S Features

• Mosfet http://www.irf.com/ Data and specifications subject to change without notice. 7/97

PDF File Details

Part number:

IRFBC20S

Manufacturer:

International Rectifier

File Size:

355.61kb

Download:

📄 Datasheet

Description:

Power mosfet. Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized de

IRFBC20S Application

• Applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole

TAGS

IRFBC20S

International Rectifier

📁 Related Datasheet

IRFBC20 - Power MOSFET (International Rectifier)
.

IRFBC20 - N-Channel MOSFET (INCHANGE)
iscN-Channel MOSFET Transistor IRFBC20 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 4.4Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V,.

IRFBC20 - Power MOSFET (Vishay)
.vishay. IRFBC20 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs.

IRFBC20L - Power MOSFET (International Rectifier)
PD - 9.1014 PRELIMINARY l l l l l l l IRFBC20S/L HEXFET® Power MOSFET D Surface Mount (IRFBC20S) Low-profile through-hole (IRFBC20L) Available in T.

IRFBC20L - Power MOSFET (Vishay)
IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configura.

IRFBC20S - Power MOSFET (Vishay)
IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configura.

IRFBC30 - TO-220C N-Channel MOSFET Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFBC30 FEATURES ·Lower Input Capacitance ·Improved Gate Charge ·Ex.

IRFBC30 - N-Channel Power MOSFET (STMicroelectronics)
® IRFBC30 N - CHANNEL 600V - 1.8 Ω - 3.6A - TO-220 PowerMESH ™ ΙΙ MOSFET TYPE IRFBC30 s s s s s V DSS 600 V R DS(on) < 2.2 Ω ID 3.6 A TYPICAL RD.

IRFBC30 - Power MOSFET (International Rectifier)
.

IRFBC30 - Power MOSFET (Vishay)
.vishay. IRFBC30 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs.