IRFBC20S
International Rectifier
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Power mosfet. Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized de
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IRFBC20 - Power MOSFET
(International Rectifier)
.
IRFBC20 - N-Channel MOSFET
(INCHANGE)
iscN-Channel MOSFET Transistor
IRFBC20
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 4.4Ω (MAX) ·Enhancement mode:
Vth = 2 to 4V (VDS = 10 V,.
IRFBC20 - Power MOSFET
(Vishay)
.vishay.
IRFBC20
Vishay Siliconix
Power MOSFET
D TO-220AB
S D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs.
IRFBC20L - Power MOSFET
(International Rectifier)
PD - 9.1014
PRELIMINARY
l l l l l l l
IRFBC20S/L
HEXFET® Power MOSFET
D
Surface Mount (IRFBC20S) Low-profile through-hole (IRFBC20L) Available in T.
IRFBC20L - Power MOSFET
(Vishay)
IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configura.
IRFBC20S - Power MOSFET
(Vishay)
IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configura.
IRFBC30 - TO-220C N-Channel MOSFET Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFBC30
FEATURES ·Lower Input Capacitance ·Improved Gate Charge ·Ex.
IRFBC30 - N-Channel Power MOSFET
(STMicroelectronics)
®
IRFBC30
N - CHANNEL 600V - 1.8 Ω - 3.6A - TO-220 PowerMESH ™ ΙΙ MOSFET
TYPE IRFBC30
s s s s s
V DSS 600 V
R DS(on) < 2.2 Ω
ID 3.6 A
TYPICAL RD.
IRFBC30 - Power MOSFET
(International Rectifier)
.
IRFBC30 - Power MOSFET
(Vishay)
.vishay.
IRFBC30
Vishay Siliconix
Power MOSFET
D TO-220AB
S D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs.