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IRFBC40 Power MOSFET

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Description

www.vishay.com IRFBC40 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max.(nC) Qgs.
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Features

* Dynamic dV/dt rating
* Repetitive avalanche rated
* Fast switching
* Ease of paralleling Available Available
* Simple drive requirements
* Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 Note
* Thi

Applications

* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free TO-220AB IRFBC40PbF IRFBC40PbF-BE3 ABSOLUTE MAX

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