IRL40B215 Datasheet - INCHANGE

IRL40B215, N-Channel MOSFET

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRL40B215，IIRL40B215 *

Features

* Static drain-source on-resistance: RDS(on) ≤2.7mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 120 IDM Drain Current-Single Pulsed 656 PD Total Dissipation @TC=25℃ 143 Tj Max.
Operating Junction Temperature 175 Tstg Storage T

IRL40B215-INCHANGE.pdf