IXTV26N50P MOSFET Datasheet - INCHANGE

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IXTV26N50P - Power MOSFET (IXYS)
PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV 26N50PS VDSS = ID25 = ≤ RDS(on) 500 V 26.

IXTV26N50PS - Power MOSFET (IXYS)
PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV 26N50PS VDSS = ID25 = ≤ RDS(on) 500 V 26.

IXTV26N60P - N-Channel Power MOSFET (IXYS)
PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS VDSS = 600 V ID25 = 26 A R.

IXTV26N60P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 270mΩ(Max) ·Fast Sw.

IXTV26N60PS - N-Channel Power MOSFET (IXYS)
PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS VDSS = 600 V ID25 = 26 A R.

IXTV200N10T - Power MOSFET (IXYS Corporation)
TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTV200N10T IXTV200N10TS VDSS ID25 RDS(on) = 100V = 200A ≤ 5.5mΩ PLUS220 (IXFV.

IXTV200N10TS - Power MOSFET (IXYS Corporation)
TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTV200N10T IXTV200N10TS VDSS ID25 RDS(on) = 100V = 200A ≤ 5.5mΩ PLUS220 (IXFV.

IXTV22N50P - Power MOSFET (IXYS)
PolarTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS220 (IXTV) IXTV22N50P IXTV22N50PS IXTQ22N50P IXTH22N50P PLU.

IXTV22N50P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTV22N50P ·FEATURES ·With TO-220F packaging ·With low gate drive requirements ·Easy to drive.

IXTV22N50PS - Power MOSFET (IXYS)
PolarTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS220 (IXTV) IXTV22N50P IXTV22N50PS IXTQ22N50P IXTH22N50P PLU.

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