IXTV26N60PS
IXYS
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N-channel power mosfet.
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IXTV26N60P - N-Channel Power MOSFET
(IXYS)
PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS
VDSS = 600 V ID25 = 26 A R.
IXTV26N60P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 270mΩ(Max) ·Fast Sw.
IXTV26N50P - Power MOSFET
(IXYS)
PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV 26N50PS
VDSS =
ID25 = ≤ RDS(on)
500 V 26.
IXTV26N50P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested.
IXTV26N50PS - Power MOSFET
(IXYS)
PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV 26N50PS
VDSS =
ID25 = ≤ RDS(on)
500 V 26.
IXTV200N10T - Power MOSFET
(IXYS Corporation)
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTV200N10T IXTV200N10TS
VDSS ID25
RDS(on)
= 100V = 200A ≤ 5.5mΩ
PLUS220 (IXFV.
IXTV200N10TS - Power MOSFET
(IXYS Corporation)
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTV200N10T IXTV200N10TS
VDSS ID25
RDS(on)
= 100V = 200A ≤ 5.5mΩ
PLUS220 (IXFV.
IXTV22N50P - Power MOSFET
(IXYS)
PolarTM
Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
PLUS220 (IXTV)
IXTV22N50P IXTV22N50PS IXTQ22N50P IXTH22N50P
PLU.
IXTV22N50P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IXTV22N50P
·FEATURES ·With TO-220F packaging ·With low gate drive requirements ·Easy to drive.
IXTV22N50PS - Power MOSFET
(IXYS)
PolarTM
Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
PLUS220 (IXTV)
IXTV22N50P IXTV22N50PS IXTQ22N50P IXTH22N50P
PLU.
