* Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ± 20 V,
IXTV230N085TS Datasheet (287.03 KB)
IXTV230N085TS
IXYS Corporation
287.03 KB
Power mosfet.
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTV230N085T IXTV230N085TS
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(.
📁 Related Datasheet
IXTV230N085T Power MOSFET (IXYS Corporation)
IXTV230N085T N-Channel MOSFET (INCHANGE)
IXTV200N10T Power MOSFET (IXYS Corporation)
IXTV200N10TS Power MOSFET (IXYS Corporation)
IXTV22N50P Power MOSFET (IXYS)
IXTV22N50P N-Channel MOSFET (INCHANGE)
IXTV22N50PS Power MOSFET (IXYS)
IXTV22N60P PolarHV Power MOSFET (IXYS)
IXTV22N60P N-Channel MOSFET (INCHANGE)
IXTV22N60PS PolarHV Power MOSFET (IXYS)
