Datasheet Details
Part number:
IXTV26N50P, IXTQ26N50P
Manufacturer:
IXYS
File Size:
378.96 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXTV26N50P, IXTQ26N50P.
Please refer to the document for exact specifications by model.
IXTV26N50P, IXTQ26N50P, Power MOSFET
PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV 26N50PS VDSS = ID25 = ≤ RDS(on) 500 V 26 A 230 mΩ TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD T J TJM Tstg TL TSOLD Md Weight TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuos Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤15
IXTV26N50P Features
* l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99206E(12/05) Symbol gfs Ciss Coss Crss t d(on) tr td(off) tf Qg(
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