Datasheet Details
Part number:
IXTV26N60P, IXTV26N60PS
Manufacturer:
IXYS
File Size:
272.60 KB
Description:
N-channel power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXTV26N60P, IXTV26N60PS.
Please refer to the document for exact specifications by model.
IXTV26N60P, IXTV26N60PS, N-Channel Power MOSFET
PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS VDSS = 600 V ID25 = 26 A RDS(on) ≤ 270 mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 150°C, RG = 5 Ω TC
IXTV26N60P Features
* z Fast Recovery diode z Unclamped Inductive Switching (UIS) rated z International standard packages z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density DS99376E(12/06) IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS Symb
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