MBRD10100CT Datasheet - INCHANGE

MBRD10100CT, Schottky Barrier Rectifier

Schottky Barrier Rectifier INCHANGE Semiconductor MBRD10100CT

Features

* With TO-251(DPKE) package
* Schottky Barrier Chip
* Guard Ring Die Construction for Transient Protection
* Low Power Loss,High Efficiency
* High Surge Capability
* High Current Capability and Low Forward Voltage Drop
* Minimum Lot-to-Lot variations for robust device performanc

Applications

* High frequency switching
* High efficiency SMPS
* Automotive ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRWM VR IF(AV) IFSM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC= 100℃ Non-repetitiv

MBRD10100CT-INCHANGE.pdf