MJ15024G
DESCRIPTION
- plement to Type PNP MJ15025
- Excellent Safe Operating Area
- High DC current Gain
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for high power audio, disk head positioners and other linear applications
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
(1)
Base Current-Continuous
Total Power Dissipation @TC=25℃
Tj
Junction Temperature
-65~200 ℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle< 10%.
MAX 0.70
UNIT ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS...
