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MJ3041 NPN Transistor

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Description

isc Silicon NPN Darlington Power Transistor .
High DC Current Gain. Low Collector-Emitter Saturation Voltage. 100% avalanche tested. Minimum Lot-to-Lot variations for robust devic.

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Datasheet Specifications

Part number
MJ3041
Manufacturer
INCHANGE
File Size
203.54 KB
Datasheet
MJ3041-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for line operated amplifier series pass and switching regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 400 VCEO Collector-Emitter Voltage 300 VEBO Emitter-Base Voltage 8 IC Collector Current-Continuous 10 ICM

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