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MJ3738 - Silicon PNP Power Transistor

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Datasheet Details

Part number MJ3738
Manufacturer Inchange Semiconductor
File Size 135.40 KB
Description Silicon PNP Power Transistor
Datasheet download datasheet MJ3738-InchangeSemiconductor.pdf

MJ3738 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -225V(Min) High Switching Speed APPLICATIONS Designed for high voltage switching and amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -250 V VCEO Collector-Emitter Voltage -225 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.5 A PD Total Power Dissipation@TC=25℃ 20 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~20

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