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MJ3738

Silicon PNP Power Transistor

MJ3738 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -225V(Min)
*High Switching Speed APPLICATIONS
*Designed for high voltage switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -250 V VCEO Collector-Emitt.

MJ3738 Datasheet (135.40 KB)

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Datasheet Details

Part number:

MJ3738

Manufacturer:

Inchange Semiconductor

File Size:

135.40 KB

Description:

Silicon pnp power transistor.

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