MJ3738 Silicon PNP Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification MJ3738 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -225V(Min). High Switching Speed APPLICATIONS. Designed for high voltage switching and.

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Datasheet Specifications

Part number: MJ3738
Manufacturer: Inchange Semiconductor
File Size: 135.40 KB
Datasheet: MJ3738-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for high voltage switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -250 V VCEO Collector-Emitter Voltage -225 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.5 A PD Total

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