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MJ3773

Silicon NPN Power Transistor

MJ3773 General Description


*Low Collector-Emitter Saturation VoltageVce(sat)=0.8V(Max)@Ic=10A
*Low Leakage Icbo=1mA(max)@140V
*High Current-Gain-Bandwidth ProductfT=1MHz(min)@Ic=1A APPLICATIONS
*Designed for power amplifier and switching applications.
*For ultimate circuit performance based on the design r.

MJ3773 Datasheet (110.94 KB)

Preview of MJ3773 PDF

Datasheet Details

Part number:

MJ3773

Manufacturer:

Inchange Semiconductor

File Size:

110.94 KB

Description:

Silicon npn power transistor.

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