Datasheet4U Logo Datasheet4U.com

MJ3055 - Silicon NPN Power Transistor

📥 Download Datasheet

Preview of MJ3055 PDF
datasheet Preview Page 2

Datasheet Details

Part number MJ3055
Manufacturer Inchange Semiconductor
File Size 206.86 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet MJ3055-InchangeSemiconductor.pdf

MJ3055 Product details

Description

Excellent Safe Operating Area DC Current Gain-hFE=20-70@IC = 4A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V

📁 MJ3055 Similar Datasheet

  • MJ3000 - 10 AMPERE DARLINGTON POWER TRANSISTORS (Motorola)
  • MJ3001 - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS (Motorola)
  • MJ3041 - NPN Transistor (INCHANGE)
  • MJ3101 - Bipolar NPN Device (Seme LAB)
  • MJ3202 - Bipolar NPN Device (Seme LAB)
  • MJ3281A - 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS (Motorola)
  • MJ3771 - HIGH-POWER NPN SILICON TRANSISTORS (Motorola)
  • MJ3772 - HIGH-POWER NPN SILICON TRANSISTORS (Motorola)
Other Datasheets by Inchange Semiconductor
Published: |