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MJ3055

Silicon NPN Power Transistor

MJ3055 General Description


*Excellent Safe Operating Area
*DC Current Gain-hFE=20-70@IC = 4A
*Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for general-purpose switching and a.

MJ3055 Datasheet (206.86 KB)

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Datasheet Details

Part number:

MJ3055

Manufacturer:

Inchange Semiconductor

File Size:

206.86 KB

Description:

Silicon npn power transistor.

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MJ3055 Silicon NPN Power Transistor Inchange Semiconductor

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