MJL21193 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -250V(Min) High DC Current Gain. hFE = 25 Min @ IC = 8 Adc. Complement to Type.

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Datasheet Specifications

Part number: MJL21193
Manufacturer: INCHANGE
File Size: 212.25 KB
Datasheet: MJL21193-INCHANGE.pdf
Description: PNP Transistor

Applications

* Perforated Emitter technology high power audio output, disk head positioners linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage -5 V IC Collector Current

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MJL21193 PNP Transistor INCHANGE

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