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MJL21194

16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

MJL21194 Features

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* 800

* 441

* 2447 MFAX: RMFAX0@email.sps.mot.com

* TOUCHTONE (602) 244

* 6609 INTERNET: http://Design

* NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi

* SPD

* JLDC, Toshikatsu Otsuki, 6F Seibu

* Butsuryu

* Center, 3

* 14

* 2 Tatsumi

MJL21194 Datasheet (159.44 KB)

Preview of MJL21194 PDF

Datasheet Details

Part number:

MJL21194

Manufacturer:

Motorola

File Size:

159.44 KB

Description:

16 ampere complementary silicon power transistors.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJL21193/D Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emit.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJL21193/D Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emit.

MJL21193 - COMPLEMENTARY SILICON POWER TRANSISTORS (ON)
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isc Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -250V(Min) High DC Current Gain – hFE = 25 Min @ .

MJL21194 - COMPLEMENTARY SILICON POWER TRANSISTORS (ON)
MJL21193 (PNP), MJL21194 (NPN) Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designe.

MJL21194 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJL21194 .. DESCRIPTION ·With TO-3PL package ·Complem.

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isc Silicon NPN Power Transistor MJL21194 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) High DC Current Gain – hFE = .

MJL21194G - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor INCHANGE Semiconductor MJL21194G DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) High .

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MJL21194 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS Motorola

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