MJL21194G Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor MJL21194G .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) High DC Current Gain. hFE = 25 Min @ IC = 8 Adc. Complement to Type.

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Datasheet Specifications

Part number: MJL21194G
Manufacturer: Inchange Semiconductor
File Size: 216.51 KB
Datasheet: MJL21194G-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Perforated Emitter technology high power audio output, disk head positioners linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Co

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MJL21194G Silicon NPN Power Transistor Inchange Semiconductor

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