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MJL21194G Datasheet - Inchange Semiconductor

MJL21194G Silicon NPN Power Transistor

*High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) High DC Current Gain * hFE = 25 Min @ IC = 8 Adc *Complement to Type MJL21193 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Perforated Emitter technology high powe.

MJL21194G-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

MJL21194G

Manufacturer:

Inchange Semiconductor

File Size:

216.51 KB

Description:

Silicon npn power transistor.

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MJL21194G MJL21194G Silicon NPN Power Transistor Inchange Semiconductor

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