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MJL21193 Datasheet (159.44 KB)
MJL21193
Motorola
159.44 KB
16 ampere complementary silicon power transistors.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJL21193/D
Silicon Power Transistors
The MJL21193 and MJL21194 utilize Perforated Emit.
📁 Related Datasheet
MJL21193 - COMPLEMENTARY SILICON POWER TRANSISTORS
(ON)
MJL21193 (PNP), MJL21194 (NPN)
Silicon Power Transistors
The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designe.
MJL21193 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
MJL21193
..
DESCRIPTION ·With TO-3PL package ·Complem.
MJL21193 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -250V(Min) High DC Current Gain – hFE = 25 Min @ .
MJL21194 - 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
(Motorola)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJL21193/D
Silicon Power Transistors
The MJL21193 and MJL21194 utilize Perforated Emit.
MJL21194 - COMPLEMENTARY SILICON POWER TRANSISTORS
(ON)
MJL21193 (PNP), MJL21194 (NPN)
Silicon Power Transistors
The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designe.
MJL21194 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJL21194
..
DESCRIPTION ·With TO-3PL package ·Complem.
MJL21194 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
MJL21194
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 250V(Min) High DC Current Gain – hFE = .
MJL21194G - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
MJL21194G
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 250V(Min) High .
