MJL21194 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor MJL21194 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) High DC Current Gain. hFE = 25 Min @ IC = 8 Adc. Complement to Type.

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Datasheet Specifications

Part number: MJL21194
Manufacturer: INCHANGE
File Size: 212.09 KB
Datasheet: MJL21194-INCHANGE.pdf
Description: NPN Transistor

Applications

* Perforated Emitter technology high power audio output, disk head positioners linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Co

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MJL21194 NPN Transistor INCHANGE

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