MTW32N20E N-Channel MOSFET

INCHANGE

MTW32N20E Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor MTW32N20E *.

MTW32N20E Features

* With TO-247 packaging
* With low gate drive requirements
* Low switching loss
* Low on-state resistance
* Easy to drive
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

MTW32N20E Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 32 19 128 PD Total Dissipation 180 Tj Operating Junction Tempe

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Datasheet Details

Part number: MTW32N20E
Manufacturer: INCHANGE
File Size: 207.88 KB
Datasheet: MTW32N20E-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

INCHANGE MTW32N20E-like datasheet