MTW32N25E TMOS POWER FET

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW32N25E/D Designer's TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolat.

📥 Download Datasheet

MTW32N25E Datasheet Preview — Preview of MTW32N25E PDF

Datasheet Specifications

Part number: MTW32N25E
Manufacturer: Motorola
File Size: 138.75 KB
Datasheet: MTW32N25E_Motorola.pdf
Description: TMOS POWER FET

Features

* erated into an inductive load; however, snubbing reduces switching losses. 8000 7000 C, CAPACITANCE (pF) 6000 5000 4000 3000 2000 1000 0 10 VDS = 0 V Ciss VGS = 0 V TJ = 25°C Crss Ciss Crss 5 VGS 0 VDS 5 10 Coss 15 20 25 GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE V

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits www. DataSheet4U. com where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche E

MTW32N25E Distributors

📁 Related Datasheet

MTW35N15E MTW16N40E MTW20N50E MTW45N10E MTW6N100E MTW7N80E

📌 All Tags

MTW32N25E TMOS POWER FET Motorola

Motorola MTW32N25E-like datasheet