Datasheet Details
Part number:
MTW32N25E
Manufacturer:
Motorola
File Size:
138.75 KB
Description:
Tmos power fet.
Datasheet Details
Part number:
MTW32N25E
Manufacturer:
Motorola
File Size:
138.75 KB
Description:
Tmos power fet.
MTW32N25E, TMOS POWER FET
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW32N25E/D Designer's TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolated Mounting Hole N Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain to source diode with a fast recovery time.
Designed for low voltage, high speed switching applicati
MTW32N25E Features
* erated into an inductive load; however, snubbing reduces switching losses. 8000 7000 C, CAPACITANCE (pF) 6000 5000 4000 3000 2000 1000 0 10 VDS = 0 V Ciss VGS = 0 V TJ = 25°C Crss Ciss Crss 5 VGS 0 VDS 5 10 Coss 15 20 25 GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE V
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