* erated into an inductive load; however, snubbing reduces switching losses. 8000 7000 C, CAPACITANCE (pF) 6000 5000 4000 3000 2000 1000 0 10 VDS = 0 V Ciss VGS = 0 V TJ = 25°C Crss Ciss Crss 5 VGS 0 VDS 5 10 Coss 15 20 25 GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE V
MTW32N25E Datasheet (138.75 KB)
MTW32N25E
Motorola
138.75 KB
Tmos power fet.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTW32N25E/D
Designer's
TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolat.
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