MTW45N10E Datasheet - ON Semiconductor

MTW45N10E Power MOSFET AMPERES 100 VOLTS RDS(on) = 0.035 OHM

www.DataSheet4U.com MTW45N10E Preferred Device Power MOSFET 45 Amps, 100 Volts N Channel TO 247 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge cir.

MTW45N10E Features

* m DataShee GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation DataSheet4U.com http://onsemi.com 4 DataSheet 4 U .com www.DataSheet4U.com MTW45N10E VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 12 QT VGS 80 60 40 VDS 30 40 50 60 70 80 ID = 45 A TJ = 25°C 90 100 20 0 110 12

MTW45N10E_ONSemiconductor.pdf