* stive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 5000 4000 C, CAPACITANCE (pF) VDS = 0 V VGS = 0 V TJ = 25°C 3000 Crss Ciss 2000 1000 Crss 0 10 5 VGS 0 VDS 5 10 Coss
MTW26N15E Datasheet (144.80 KB)
MTW26N15E
Motorola
144.80 KB
Tmos power fet.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolat.
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