Datasheet Specifications
- Part number
- MTW26N15E
- Manufacturer
- Motorola
- File Size
- 144.80 KB
- Datasheet
- MTW26N15E_Motorola.pdf
- Description
- TMOS POWER FET
Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW26N15E/D Designer's TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolat.
Features
* stive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 5000 4000 C, CAPACITANCE (pF) VDS = 0 V VGS = 0 V TJ = 25°C 3000 Crss Ciss 2000 1000 Crss 0 10 5 VGS 0 VDS 5 10 CossApplications
* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits www. DataSheet4U. com where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.MTW26N15E Distributors
📁 Related Datasheet
📌 All Tags