MTW7N80E Datasheet - ON Semiconductor

MTW7N80E Power MOSFET 7 Amp

MTW7N80E Preferred Device Power MOSFET 7 Amps, 800 Volts N Channel TO 247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain to source diode with a fast recovery time. Designed for high volta.

MTW7N80E Features

* VOLTAGE (VOLTS) Figure 7a. Capacitance Variation Figure 7b. High Voltage Capacitance Variation http://onsemi.com 4 MTW7N80E VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 12 QT 10 8 6 4 2 0 Q3 0 10 20 30 VDS 40 50 QG, TOTAL GATE CHARGE (nC) ID = 7 A TJ = 25°C 60 Q1 Q2 VGS 600 500 400 300 200 100 0 70 1000

MTW7N80E_ONSemiconductor.pdf