MTW32N20E TMOS POWER FET

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW32N20E/D Designer's TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolat.

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Datasheet Specifications

Part number: MTW32N20E
Manufacturer: Motorola
File Size: 176.00 KB
Datasheet: MTW32N20E_Motorola.pdf
Description: TMOS POWER FET

Features

* C, CAPACITANCE (pF) Crss 6000 4000 Ciss 2000 Coss 0 10 5 VGS 0 VDS 5 10 15 20 25 GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor Device Data MTW32N20E VGS, GATE
* TO
* SOURCE

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits www. DataSheet4U. com where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche E

MTW32N20E Distributors

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MTW32N20E TMOS POWER FET Motorola

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