MTW32N20E Datasheet - Motorola

MTW32N20E TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW32N20E/D Designer's TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolated Mounting Hole N Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed switching applicati.

MTW32N20E Features

* C, CAPACITANCE (pF) Crss 6000 4000 Ciss 2000 Coss 0 10 5 VGS 0 VDS 5 10 15 20 25 GATE

* TO

* SOURCE OR DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor Device Data MTW32N20E VGS, GATE

* TO

* SOURCE

MTW32N20E_Motorola.pdf

MTW32N20E Datasheet Preview — Preview of MTW32N20E PDF

Datasheet Details

Part number:

MTW32N20E

Manufacturer:

Motorola

File Size:

176.00 KB

Description:

Tmos power fet.

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MTW32N20E MTW32N20E TMOS POWER FET Motorola

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