MTW8N60E Datasheet (ON Semiconductor) - TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM

MTW8N60E, TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM

MTW8N60E Preferred Device Power MOSFET 8 Amps, 600 Volts N Channel TO 247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time.

In addition, this advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes.

The new energy efficient design also offers a drain to source diode with a fast recovery time.

Designed for high volta

MTW8N60E Features

* 10000 VGS = 0 V Ciss TJ = 25°C Coss 100 Crss 100 VDS, DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) 1000 GATE

* TO

* SOURCE OR DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Figure 7a. Capacitance Variation Figure 7b. High Voltage Capacitance Variation http://onsemi.com 4 MT