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MTW8N60E Datasheet - ON Semiconductor

TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM

MTW8N60E Features

* 10000 VGS = 0 V Ciss TJ = 25°C Coss 100 Crss 100 VDS, DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) 1000 GATE

* TO

* SOURCE OR DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Figure 7a. Capacitance Variation Figure 7b. High Voltage Capacitance Variation http://onsemi.com 4 MT

MTW8N60E Datasheet (206.70 KB)

Preview of MTW8N60E PDF

Datasheet Details

Part number:

MTW8N60E

Manufacturer:

ON Semiconductor ↗

File Size:

206.70 KB

Description:

Tmos power fet 8.0 amperes 600 volts rds(on) = 0.55 ohm.
MTW8N60E Preferred Device Power MOSFET 8 Amps, 600 Volts N Channel TO 247 This high voltage MOSFET uses an advanced termination schem.

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TAGS

MTW8N60E TMOS POWER FET 8.0 AMPERES 600 VOLTS RDSon 0.55 OHM ON Semiconductor

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