MTW8N60E TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM

ON Semiconductor

Description

MTW8N60E Preferred Device Power MOSFET 8 Amps, 600 Volts N *Channel TO *247 This high voltage MOSFET uses an advanced termination schem.

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Datasheet Specifications

Part number: MTW8N60E
Manufacturer: ON Semiconductor ↗
File Size: 206.70 KB
Datasheet: MTW8N60E_ONSemiconductor.pdf
Description: TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM

Features

* 10000 VGS = 0 V Ciss TJ = 25°C Coss 100 Crss 100 VDS, DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) 1000 GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7a. Capacitance Variation Figure 7b. High Voltage Capacitance Variation http://onsemi. com 4 MT

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Robust High Voltage Termination

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MTW8N60E TMOS POWER FET 8.0 AMPERES 600 VOLTS RDSon 0.55 OHM ON Semiconductor

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