MTW6N100E Power MOSFET

ON Semiconductor

Description

MTW6N100E Preferred Device Power MOSFET 6 Amps, 1000 Volts N *Channel TO *247 This high voltage MOSFET uses an advanced termination sche.

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Datasheet Specifications

Part number: MTW6N100E
Manufacturer: ON Semiconductor ↗
File Size: 204.85 KB
Datasheet: MTW6N100E-ONSemiconductor.pdf
Description: Power MOSFET

Features

* ss 3000 Ciss 2000 1000 0 10 Crss Coss 5 0 5 10 15 20 25 VGS VDS GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7a. Capacitance Variation 1000 100 10 10 Coss Crss 100 VDS, DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7b. High Voltage Capac

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Robust High Voltage Termination

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MTW6N100E Power MOSFET ON Semiconductor

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