MTW6N100E Datasheet - ON Semiconductor

MTW6N100E Power MOSFET

MTW6N100E Preferred Device Power MOSFET 6 Amps, 1000 Volts N Channel TO 247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain to source diode with a fast recovery time. Designed for high volt.

MTW6N100E Features

* ss 3000 Ciss 2000 1000 0 10 Crss Coss 5 0 5 10 15 20 25 VGS VDS GATE

* TO

* SOURCE OR DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Figure 7a. Capacitance Variation 1000 100 10 10 Coss Crss 100 VDS, DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Figure 7b. High Voltage Capac

MTW6N100E-ONSemiconductor.pdf