MTW6N100E, Motorola
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTW6N100E/D
Designer's
TMOS E-FET .™ Power Field Effect Transistor TO-247 With Isolat.
MTW6N100E, ON Semiconductor
MTW6N100E
Preferred Device
Power MOSFET 6 Amps, 1000 Volts
N−Channel TO−247
This high voltage MOSFET uses an advanced termination scheme to provide en.
MTW10N100E, ON Semiconductor
MTW10N100E co
m
Preferred Device
Power MOSFET t e 10 Amps, e 1000 Volts
N–Channel TO–247
This high voltage MOSFET uses an advanced termination sche.
MTW14N50E, ON Semiconductor
MTW14N50E
Preferred Device
Power MOSFET 14 Amps, 500 Volts
N−Channel TO−247
This high voltage MOSFET uses an advanced termination scheme to provide en.
