Datasheet Details
- Part number
- MTW6N100E
- Manufacturer
- Motorola
- File Size
- 167.51 KB
- Datasheet
- MTW6N100E_Motorola.pdf
- Description
- TMOS POWER FET
MTW6N100E Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW6N100E/D Designer's TMOS E-FET .™ Power Field Effect Transistor TO-247 With Isolat.MTW6N100E Features
* it loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, sMTW6N100E Applications
* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.📁 Related Datasheet
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