MTW32N20E
127.52kb
Power mosfet.
TAGS
📁 Related Datasheet
MTW32N20E - TMOS POWER FET
(Motorola)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTW32N20E/D
Designer's
TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolat.
MTW32N20E - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
MTW32N20E
·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Low switching l.
MTW32N25E - TMOS POWER FET
(Motorola)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTW32N25E/D
Designer's
TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolat.
MTW33N10E - TMOS POWER FET
(Motorola)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTW33N10E/D
Designer's
™
Data Sheet
TMOS EĆFET
.
™
MTW33N10E
Motorola Preferred .
MTW35N15E - Power MOSFET
(ON Semiconductor)
MTW35N15E
Preferred Device
Power MOSFET 35 Amps, 150 Volts
N−Channel TO−247
This advanced Power MOSFET is designed to withstand high energy in the ava.
MTW35N15E - TMOS POWER FET
(Motorola)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTW35N15E/D
Designer's
TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolat.
MTW10N100E - TMOS POWER FET
(Motorola)
w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
w
t a .D
S a
e h
U 4 t e
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
.
MTW10N100E - Power MOSFET
(ON Semiconductor)
MTW10N100E co
m
Preferred Device
Power MOSFET t e 10 Amps, e 1000 Volts
N–Channel TO–247
This high voltage MOSFET uses an advanced termination sche.
MTW10N40E - TMOS E-FET POWER FIELD EFFECT TRANSISTOR
(Motorola)
w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
w
a .D
S ta
e h
U 4 t e
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
.
MTW14N50E - TMOS POWER FET
(Motorola)
w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
w
t a .D
S a
e h
U 4 t e
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
.
