MTW32N20E Datasheet - ON Semiconductor

MTW32N20E Power MOSFET

MTW32N20E Power MOSFET 32 Amps, 200 Volts N Channel TO 247 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutatin.

MTW32N20E Features

* Avalanche Energy Specified

* Source

* to

* Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

* Diode is Characterized for Use in Bridge Circuits

* IDSS and VDS(on) Specified at Elevated Temperature

* Isolated Mounting Hole

MTW32N20E-ONSemiconductor.pdf