* Avalanche Energy Specified
* Source
* to
* Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
* Diode is Characterized for Use in Bridge Circuits
* IDSS and VDS(on) Specified at Elevated Temperature
* Isolated Mounting Hole
MTW32N20E Datasheet (127.52 KB)
MTW32N20E
127.52 KB
Power mosfet.
MTW32N20E
Power MOSFET 32 Amps, 200 Volts
N
*Channel TO
*247
This advanced Power MOSFET is designed to withstand high energy in the ava.
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