MTW23N25E - TMOS POWER FET 23 AMPERES 250 VOLTS
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW23N25E/D Designer's TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolated Mounting Hole N Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain to source diode with a fast recovery time.
Designed for low voltage, high speed switching applicati
MTW23N25E Features
* rated into an inductive load; however, snubbing reduces switching losses. 7000 6000 C, CAPACITANCE (pF) 5000 4000 VDS = 0 V Ciss VGS = 0 V TJ = 25°C Ciss 3000 2000 1000 0 10 5 VGS 0 VDS 5 10 Coss Crss 15 20 25 Crss GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLT
