MTW23N25E Datasheet - Motorola

MTW23N25E TMOS POWER FET 23 AMPERES 250 VOLTS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW23N25E/D Designer's TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolated Mounting Hole N Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed switching applicati.

MTW23N25E Features

* rated into an inductive load; however, snubbing reduces switching losses. 7000 6000 C, CAPACITANCE (pF) 5000 4000 VDS = 0 V Ciss VGS = 0 V TJ = 25°C Ciss 3000 2000 1000 0 10 5 VGS 0 VDS 5 10 Coss Crss 15 20 25 Crss GATE

* TO

* SOURCE OR DRAIN

* TO

* SOURCE VOLTAGE (VOLT

MTW23N25E_Motorola.pdf