MTW24N40E - TMOS POWER FET 24 AMPERES 400 VOLTS
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW24N40E/D Designer's TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolated Mounting Hole N Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time.
In addition, this advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation mod
MTW24N40E Features
* h board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 9000 8000 C,
