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MTW24N40E Datasheet - Motorola

MTW24N40E - TMOS POWER FET 24 AMPERES 400 VOLTS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW24N40E/D Designer's TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolated Mounting Hole N Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time.

In addition, this advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation mod

MTW24N40E Features

* h board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 9000 8000 C,

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Datasheet Details

Part number:

MTW24N40E

Manufacturer:

Motorola

File Size:

153.47 KB

Description:

Tmos power fet 24 amperes 400 volts.

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