* -TO-SOURCE VOLTAGE (VOLTS) 14 12 10 8 6 4 2 0 0 Q3 VDS 20 30 40 50 Q1 ID = 33 A TJ = 25°C VGS QT Q2 140 VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 125 100 80 60 40 20 0 60 1000 VDD = 50 V ID = 33 A VGS = 10 V TJ = 25°C t, TIME (ns) tr 100 tf td(off) td(on) 1 10 RG, GATE RESISTANCE (OHMS) 100 10 10
MTW33N10E Datasheet (180.23 KB)
MTW33N10E
Motorola
180.23 KB
Tmos power fet.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW33N10E/D Designer's ™ Data Sheet TMOS EĆFET . ™ MTW33N10E Motorola Preferred .
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