Datasheet Specifications
- Part number
- MTW33N10E
- Manufacturer
- Motorola
- File Size
- 180.23 KB
- Datasheet
- MTW33N10E_Motorola.pdf
- Description
- TMOS POWER FET
Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW33N10E/D Designer's ™ Data Sheet TMOS EĆFET .™ MTW33N10E Motorola Preferred .
Features
* -TO-SOURCE VOLTAGE (VOLTS) 14 12 10 8 6 4 2 0 0 Q3 VDS 20 30 40 50 Q1 ID = 33 A TJ = 25°C VGS QT Q2 140 VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 125 100 80 60 40 20 0 60 1000 VDD = 50 V ID = 33 A VGS = 10 V TJ = 25°C t, TIME (ns) tr 100 tf td(off) td(on) 1 10 RG, GATE RESISTANCE (OHMS) 100 10 10Applications
* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits www. DataSheet4U. com where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.MTW33N10E Distributors
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