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R6009JNJ N-Channel MOSFET

R6009JNJ Description

isc N-Channel MOSFET Transistor R6009JNJ .
Designed for use in switch mode power supplies and general purpose applications.

R6009JNJ Features

* Drain Current
* ID=9A@ TC=25℃
* Drain Source Voltage- : VDSS=600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 585mΩ(Max)
* 100% avalanche tested

R6009JNJ Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 9 A IDM Drain Current-Single Pluse 27 A PD Total Dissipation @TC=25℃ 125 W TJ Max. Operating Junction Temperatu

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Datasheet Details

Part number
R6009JNJ
Manufacturer
INCHANGE
File Size
250.75 KB
Datasheet
R6009JNJ-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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