Datasheet4U Logo Datasheet4U.com

R6020KNZ

N-Channel MOSFET

R6020KNZ Features

* Drain Current

* ID= 20A@ TC=25℃

* Drain Source Voltage- : VDSS=600V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 196mΩ(Max)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* Designed for use

R6020KNZ General Description


*Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 20 A IDM Drain Current-Single Plus.

R6020KNZ Datasheet (260.94 KB)

Preview of R6020KNZ PDF

Datasheet Details

Part number:

R6020KNZ

Manufacturer:

INCHANGE

File Size:

260.94 KB

Description:

N-channel mosfet.

📁 Related Datasheet

R6020KNJ N-Channel MOSFET (INCHANGE)

R6020KNJ Power MOSFET (ROHM)

R6020KNX N-Channel MOSFET (INCHANGE)

R6020KNX Power MOSFET (ROHM)

R6020KNZ Power MOSFET (ROHM)

R6020KNZ1 N-Channel MOSFET (INCHANGE)

R6020KNZ1 Power MOSFET (ROHM)

R6020KNZ4 Power MOSFET (ROHM)

R6020422 Fast Recovery Rectifier (Powerex Power Semiconductors)

R6020425 Fast Recovery Rectifier (Powerex Power Semiconductors)

TAGS

R6020KNZ N-Channel MOSFET INCHANGE

Image Gallery

R6020KNZ Datasheet Preview Page 2

R6020KNZ Distributor