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R6076ENZ1 N-Channel MOSFET

R6076ENZ1 Description

isc N-Channel MOSFET Transistor R6076ENZ1 .
Designed for use in switch mode power supplies and general purpose applications.

R6076ENZ1 Features

* Drain Current
* ID= 76A@ TC=25℃
* Drain Source Voltage- : VDSS= 600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 42mΩ(Max)
* 100% avalanche tested

R6076ENZ1 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 76 A IDM Drain Current-Single Pluse 228 A PD Total Dissipation @TC=25℃ 120 W TJ Max. Operating Junction Tempera

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Datasheet Details

Part number
R6076ENZ1
Manufacturer
INCHANGE
File Size
298.75 KB
Datasheet
R6076ENZ1-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE R6076ENZ1-like datasheet