R6076ENZ1 Datasheet, Mosfet, INCHANGE

R6076ENZ1 Features

  • Mosfet
  • Drain Current
      –ID= 76A@ TC=25℃
  • Drain Source Voltage- : VDSS= 600V(Min)
  • Static Drain-Source On-Resistance : RDS(on) = 42mΩ(Max)
  • 100% a

PDF File Details

Part number:

R6076ENZ1

Manufacturer:

INCHANGE

File Size:

298.75kb

Download:

📄 Datasheet

Description:

N-channel mosfet. Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL

Datasheet Preview: R6076ENZ1 📥 Download PDF (298.75kb)
Page 2 of R6076ENZ1

R6076ENZ1 Application

  • Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continu

TAGS

R6076ENZ1
N-Channel
MOSFET
INCHANGE

📁 Related Datasheet

R6076ENZ1 - Nch 600V 76A Power MOSFET (ROHM)
NotNeRewcDoemsimgennsded for R6076ENZ1 Nch 600V 76A Power MOSFET Data Sheet VDSS RDS(on) (Max.) ID PD 600V 0.042W 76A 120W lOutline TO-247 (1) (.

R6076KNZ4 - Power MOSFET (ROHM)
R6076KNZ4   Nch 600V 76A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 42mΩ ±76A 735W lFeatures 1) Low on-resistance 2) Fast switching 3) Parallel use.

R6076MNZ1 - MOSFET (ROHM)
R6076MNZ1   Nch 600V 76A Power MOSFET    Datasheet NotNeRewcDoemsimgennsded for VDSS 600V lOutline   RDS(on)(Max.) 0.055Ω ID ±76A TO-247 P.

R600 - General Purpose Rectifier (Powerex Power Semiconductors)
.

R6000 - High Voltage Rectifiers (LGE)
R2500-R6000 High Voltage Rectifiers Features — Low cost — Low leakage — Low forward voltage drop — High current capability — Easily cleaned with alco.

R6000F - 0.2mA Fast Recovery High Voltage Rectifier (Micro Commercial Components)
MCC Features • • • • AVALANCHE OPERATION UL 94V0 FLAME RETARDANT EPOXY MOLDING COMPOND BEVELED ROUND CHIP LOW COST R3500F THRU R6000F 0.2mA Fast Reco.

R6000GP - High Voltage Silicon Rectifier (MCC)
MCC R Micro Commercial Components      omponents 20736 Marilla Street Chatsworth  # $ % # .

R6002END3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor R6002END3 FEATURES ·Drain Current –ID=1.7A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-R.

R6002END3 - Power MOSFET (ROHM)
R6002END3   Nch 600V 2A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 3.4Ω ±1.7A 26W lFeatures 1) Low on-resistance 2) Fast switching 4) Drive circuit.

R6002ENH - Power MOSFET (ROHM)
R6002ENH   Nch 600V 2A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 3.4Ω ±1.7A 2W lFeatures 1) Low on-resistance 2) Fast switching 3) Parallel use is.

Stock and price

ROHM Semiconductor
MOSFET N-CH 600V 76A TO247
DigiKey
R6076ENZ1C9
0 In Stock
0
Unit Price : $0
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts