R6076ENZ1
INCHANGE
298.75kb
N-channel mosfet. Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL
TAGS
📁 Related Datasheet
R6076ENZ1 - Nch 600V 76A Power MOSFET
(ROHM)
NotNeRewcDoemsimgennsded for
R6076ENZ1
Nch 600V 76A Power MOSFET
Data Sheet
VDSS RDS(on) (Max.)
ID PD
600V 0.042W
76A 120W
lOutline
TO-247
(1) (.
R6076KNZ4 - Power MOSFET
(ROHM)
R6076KNZ4
Nch 600V 76A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
600V 42mΩ ±76A 735W
lFeatures
1) Low on-resistance 2) Fast switching 3) Parallel use.
R6076MNZ1 - MOSFET
(ROHM)
R6076MNZ1
Nch 600V 76A Power MOSFET
Datasheet
NotNeRewcDoemsimgennsded for
VDSS
600V
lOutline
RDS(on)(Max.)
0.055Ω
ID
±76A
TO-247
P.
R600 - General Purpose Rectifier
(Powerex Power Semiconductors)
.
R6000 - High Voltage Rectifiers
(LGE)
R2500-R6000
High Voltage Rectifiers
Features
Low cost Low leakage Low forward voltage drop High current capability Easily cleaned with alco.
R6000F - 0.2mA Fast Recovery High Voltage Rectifier
(Micro Commercial Components)
MCC
Features
• • • • AVALANCHE OPERATION UL 94V0 FLAME RETARDANT EPOXY MOLDING COMPOND BEVELED ROUND CHIP LOW COST
R3500F THRU R6000F
0.2mA Fast Reco.
R6000GP - High Voltage Silicon Rectifier
(MCC)
MCC R
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth # $
% # .
R6002END3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
R6002END3
FEATURES ·Drain Current –ID=1.7A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-R.
R6002END3 - Power MOSFET
(ROHM)
R6002END3
Nch 600V 2A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
600V 3.4Ω ±1.7A 26W
lFeatures
1) Low on-resistance 2) Fast switching 4) Drive circuit.
R6002ENH - Power MOSFET
(ROHM)
R6002ENH
Nch 600V 2A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
600V 3.4Ω ±1.7A 2W
lFeatures
1) Low on-resistance 2) Fast switching 3) Parallel use is.