R6515KNZ - N-Channel MOSFET

INCHANGE

📥 Download Datasheet

R6515KNZ Datasheet Preview — Preview of R6515KNZ PDF

Datasheet Details

Part number	R6515KNZ
Manufacturer	INCHANGE
File Size	260.50 KB
Description	N-Channel MOSFET
Datasheet	R6515KNZ-INCHANGE.pdf

R6515KNZ Product details

Description

Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 15 A IDM Drain Current-Single Pluse 45 A PD Total Dissipation @TC=25℃ 60 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Res

Features

Drain Current.
ID= 15A@ TC=25℃.
Drain Source Voltage- : VDSS=650V(Min).
Static Drain-Source On-Resistance : RDS(on) = 315mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 R6515KNZ Similar Datasheet

R6515KNX3 - Power MOSFET (ROHM)
R6515 - (R650x / R651x) Microprocessors (Rockwell)
R6515ENJ - Power MOSFET (ROHM)
R6515ENX - Nch 650V 15A Power MOSFET (ROHM)
R6511KNX - Power MOSFET (ROHM)
R6511Q - One-Chip Microprocessor (Rockwell)
R6512 - (R650x / R651x) Microprocessors (Rockwell)
R6513 - (R650x / R651x) Microprocessors (Rockwell)

Other Datasheets by INCHANGE

R6515KNJ - N-Channel MOSFET
R6515KNX - N-Channel MOSFET
R6515ENZ - N-Channel MOSFET
R6511ENJ - N-Channel MOSFET
R6511ENX - N-Channel MOSFET
R6511KNJ - N-Channel MOSFET

Published: Mar 1, 2021 |