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RJK2006DPE N-Channel MOSFET

RJK2006DPE Description

Isc N-Channel MOSFET Transistor RJK2006DPE *.

RJK2006DPE Features

* With To-252(DPAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

RJK2006DPE Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 40 100 PD Total Dissipation @TC=25℃ 100 Tch Max. Operating Junc

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Datasheet Details

Part number
RJK2006DPE
Manufacturer
INCHANGE
File Size
258.11 KB
Datasheet
RJK2006DPE-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE RJK2006DPE-like datasheet