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RJK6015DPK N-Channel MOSFET

RJK6015DPK Description

isc N-Channel MOSFET Transistor *.

RJK6015DPK Features

* Drain Current ID= 21A@ TC=25℃
* Drain Source Voltage- : VDSS= 600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 0.36Ω(Max)
* Fast Switching
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

RJK6015DPK Applications

* Low on-resistance
* Low leakage current
* High speed switching
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 21 A IDM Drain Current-Single Plused

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Datasheet Details

Part number
RJK6015DPK
Manufacturer
INCHANGE
File Size
229.03 KB
Datasheet
RJK6015DPK-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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