RJK6012DPE Datasheet - Renesas

RJK6012DPE N-Channel Power MOSFET

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RJK6012DPE Features

* Low on-resistance RDS(on) = 0.77  typ. (at ID = 5 A, VGS = 10 V, Ta = 25C)

* Low leakage current

* High speed switching R07DS0445EJ0300 (Previous: REJ03G1481-0200) Rev.3.00 Jun 17, 2011 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3.

RJK6012DPE_Renesas.pdf