RJK6002DPD Datasheet - Renesas Technology

datasheet Preview Page 1 from Datasheet4u.com

RJK6002DPD Silicon N Channel MOS FET High Speed Power Switching

www.DataSheet4U.com RJK6002DPD Silicon N Channel MOS FET High Speed Power Switching REJ03G1483-0100 Rev.1.00 Nov 09, 2006 .

RJK6002DPD_RenesasTechnology.pdf

RJK6002DPD Datasheet Preview — Preview of RJK6002DPD PDF

Datasheet Details

Part number:

RJK6002DPD

Manufacturer:

Renesas ↗ Technology

File Size:

97.47 KB

Description:

Silicon N Channel MOS FET High Speed Power Switching

Features

* Low on-resistance
* Low leakage current
* High speed switching Outline RENESAS Package code: PRSS0004ZA-A (Package name : MP-3A) 4 1. 2. 3. 4. Gate Drain Source Drain 2, 4 1 12 3 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage

Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

RJK6002DPD Distributors

📁 Related Datasheet

RJK6002DPE RJK6002DPH-E0 RJK6002DJE RJK6006DPP-A0 RJK6006DPP-E0 RJK6011DJA

📌 All Tags

RJK6002DPD Silicon Channel MOS FET High Speed Power Switching Renesas Technology

Renesas Technology RJK6002DPD-like datasheet