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RJK6006DPP-E0 N-Channel Power MOSFET

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Description

Preliminary Datasheet RJK6006DPP-E0 600V - 5A - MOS FET High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Features

* Low on-state resistance RDS(on) = 1.4  typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C)
* High speed switching R07DS0610EJ0100 Rev.1.00 Mar 16, 2012 Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) D G 1. Gate 2. Drain 3. Source 1 2 3 S Absolute Maximum Ratings www. Da

Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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