RJK6002DPH-E0

MOS FET

Renesas

RJK6002DPH-E0 Features

* Low on-resistance RDS(on) = 5.7  typ. (at ID = 1 A, VGS = 10 V, Ta = 25C)

* Low leakage current

* High speed switching R07DS1047EJ0100 Rev.1.00 Mar 21, 2013 Outline RENESAS Package code: PRSS0004ZJ-B (Package name: TO-251) 4 1. 2. 3. 4. Gate Drain Source Drain D G 12 3 S Absolut

RJK6002DPH-E0 General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJK6002DPH-E0 Datasheet (123.17 KB)