RJK6006DPD - Silicon N Channel MOS FET High Speed Power Switching

Renesas Technology

RJK6006DPD Datasheet Preview — Preview of RJK6006DPD PDF

Datasheet Details

Part number	RJK6006DPD
Manufacturer	Renesas ↗ Technology
File Size	101.13 KB
Description	Silicon N Channel MOS FET High Speed Power Switching
Datasheet	RJK6006DPD_RenesasTechnology.pdf

RJK6006DPD Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Low on-state resistance RDS(on) = 1.4  typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C).
High speed switching REJ03G1935-0100 Rev.1.00 Jun 01, 2010 Outline.

📁 RJK6006DPD Similar Datasheet

RJK6006DPP-A0 - Power MOSFET (Renesas)
RJK6006DPP-E0 - N-Channel Power MOSFET (Renesas)
RJK6002DJE - MOS FET (Renesas)
RJK6002DPE - MOS FET (Renesas)
RJK6002DPH-E0 - MOS FET (Renesas)
RJK6011DJA - High Speed Power Switching MOS FET (Renesas)
RJK6011DJE - N-Channel Power MOSFET (Renesas)
RJK6012DPE - N-Channel Power MOSFET (Renesas)

Other Datasheets by Renesas Technology

RJK6002DPD - Silicon N Channel MOS FET High Speed Power Switching
RJK6009DPP - Silicon N Channel MOS FET High Speed Power Switching
RJK6013DPE - Silicon N-Channel MOSFET
RJK6014DPK - Silicon N-Channel MOSFET
RJK6014DPP - Silicon N-Channel MOSFET
RJK6015DPK - Silicon N-Channel MOSFET

Published: Jul 23, 2010 |