RJK6006DPD Datasheet (Renesas Technology) - Silicon N Channel MOS FET High Speed Power Switching

RJK6006DPD, Silicon N Channel MOS FET High Speed Power Switching

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Renesa

RJK6006DPD Features

* Low on-state resistance RDS(on) = 1.4  typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C)

* High speed switching REJ03G1935-0100 Rev.1.00 Jun 01, 2010 Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 1. 2. 3. 4. Gate Drain Source Drain D G 12 3 S Absolute Maximum Ratings