SPB20N60C3 Datasheet - INCHANGE

SPB20N60C3, N-Channel MOSFET

Isc N-Channel MOSFET Transistor SPB20N60C3 *

Features

* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 20.7 13.1 62.1 PD Total Dissipation @TC=25℃ 208 Tch Max.
Operat

SPB20N60C3-INCHANGE.pdf