SPB20N60S5 Datasheet, Mosfet, INCHANGE

SPB20N60S5 Features

• Mosfet
• With TO-263( D2PAK ) packaging
• High speed switching
• Low gate input resistance
• Standard level gate drive
• Easy to use
• 100% avalanche

PDF File Details

Part number:

SPB20N60S5

Manufacturer:

INCHANGE

File Size:

200.05kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

SPB20N60S5 Application

• Applications
• Power supply
• Switching applications
• ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain

TAGS

SPB20N60S5

INCHANGE

📁 Related Datasheet

SPB20N60S5 - Cool MOS Power Transistor (Infineon Technologies)
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate.

SPB20N60C2 - Cool MOS Power Transistor (Infineon Technologies)
Final data SPP20N60C2, SPB20N60C2 SPA20N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best R DS(on.

SPB20N60C3 - Cool MOS& Power Transistor (Infineon Technologies)
&RRO026Œ 3RZHU7UDQVLVWRU )HDWXUH • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH • 3HULRGLFDYDODQFKHUDWHG •([WUHPHGYGWUDWHG.

SPB20N60C3 - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor SPB20N60C3 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·.

SPB200UFA - (SPBxx0UFA) Single Phase Bridge (VMI)
.. 5,000 V - 20,000 V Single Phase Bridge 2.0 A Forward Current 70 ns Recovery Time SPB50UFA SPB100UFA SPB150UFA SPB200UFA ELECTRI.

SPB200UFB - (SPBxx0UFB) Single Phase Bridge (VMI)
.. 5,000 V - 20,000 V Single Phase Bridge 2.0 A Forward Current 70 ns Recovery Time SPB50UFB SPB100UFB SPB150UFB SPB200UFB ELECTRI.

SPB2026Z - 0.7GHz to 2.2GHz 2W InGaP AMPLIFIER (RFMD)
SPB2026Z 0.7GHz to 2.2GHz 2W InGaP Amplifier SPB2026Z 0.7GHz to 2.2GHz 2W InGaP AMPLIFIER NOT FOR NEW DESIGNS Package: SOF-26 NOT FOR NEW DESIGNS.

SPB21N10 - SIPMOS Power-Transistor (Infineon Technologies)
Preliminary data SPI21N10 SPP21N10,SPB21N10 SIPMOS Power-Transistor Feature
N-Channel
Enhancement mode
175°C operating temperature
Avalanch.

SPB21N10 - SIPMOS Power-Transistor (Infineon Technologies)
Preliminary data SPI21N10 SPP21N10,SPB21N10 SIPMOS Power-Transistor Feature
N-Channel
Enhancement mode
175°C operating temperature
Avalanch.

SPB21N50C3 - Power Transistor (Infineon Technologies)
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate.